MX1011B700Y |
RFQ for MX1011B700Y Required Field |
 |
| Product | Manufacturers | Pack | D/C |
| MX1011B700Y | - | - | - |
NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to flange.
Typical Application |
Features |
| Intended for use in common base, class C, broadband, pulsed power amplifiers for IFF, TCAS and Mode S applications in the 1030 to 1090 MHz band. Also suitable for medium pulse, heavy duty operation within the 1030 to 1150 MHz band. | · Suitable for short and medium pulse applications up to 100 ms/10%· Internal input and output prematching networks allow an easier design of circuits· Diffused emitter ballasting resistors improve ruggedness· Interdigitated emitter-base structure provides high emitter efficiency· Gold metallization with barrier realizes very good stability of the characteristics and excellent lifetime· Multicell geometry improves power sharing and reduces thermal resistance. |
| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | 65 | V |
| VCEO | collector-emitter voltage | open base | - | 15 | V |
| VCES | collector-emitter voltage | RBE = 0 | - | 65 | V |
| VEBO | emitter-base voltage | open collector | - | 3 | V |
| ICM | collector current | tp 10 s; 1% | - | 40 | A |
| Ptot | total power dissipation | Tmb = 75 ;tp 10 s; 1% | - | 1365 | W |
| Tstg | storage temperature | -65 | +200 | ||
| Tj | junction temperature | - | 200 | ||
| Tsld | soldering temperature | t 10 s; note 1 | - | 235 |
